The HI-8200 is a quad analog CMOS switch fabricated with Silicon-on-Insulator (SOI) technology for latch-up free operation and maximum switch isolation. High voltage gate drive is entirely created on-chip enabling +/-12V switching range from a single 3.3V or 5V supply. These switches are ideally suited for applications demanding low switch leakage when the power pins are 0V.
At 25°C and with VDD from 3.0V to 5.5V, the switch resistance (RON) is typically 8 Ohm. RON is independent of VDD. In a switching range of -5V to +5V, the maximum deviation of RON from flat is less than 5%.
These switches conduct equally well in either direction. Power down and Off state leakages are less than 10nA maximum. Charge injection is less than 10pC. Switching times are typically 180ns to the On state and 60ns to the Off state. The on-board charge pump allows an On/Off cycle time of 5KHz for all four switches simultaneously before the switching range becomes restricted.
The HI-8200 provides four each normally open switches when the switch control inputs are low. The HI-8201 provides four each normally closed switches when the switch control inputs are low. The HI-8202 provides a combination of two normally closed and two normally open switches.
Industry-standard plastic package options include 20-pin TSSOP, 16-pin DIP and 16-pin QFN. Ceramic packaging is available on request. All three products are offered in both industrial (-40°C to +85°C) and extended (-55°C to +125°C) temperature range options.
Features
Low RON: 10 Ohm max across the switching range at 25°C
Switch nodes are open-circuit when chip is powered down
Robust CMOS Silicon-on-Insulator (SOI) technology
SOI switch isolation with 1nA typical Off leakage
ESD protection > 4KV HBM
Fast switching time with break-before-make
Low power
Extended Temperature Range (-55°C to +125°C)
Applications
Data Bus Isolation
Battery-Operated Systems
Test Equipment
Communication Systems
Data Acquisition Systems
